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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Colloidal processing of chemically prepared zinc oxide varistors. Part II: Near-net-shape forming and fired electrical properties
- Nelson S. Bell, James A. Voigt, Bruce A. Tuttle, Duane B. Dimos
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- Journal:
- Journal of Materials Research / Volume 19 / Issue 5 / May 2004
- Published online by Cambridge University Press:
- 03 March 2011, pp. 1341-1347
- Print publication:
- May 2004
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Chemically prepared zinc oxide powders were processed for the production of high aspect ratio varistor components (length/diameter >5). Near-net-shape casting methods including slip casting and agarose gelcasting were evaluated for effectiveness in achieving a uniform green microstructure that densifies to near theoretical values during sintering. The structure of the green parts was examined by mercury porisimetry. Agarose gelcasting produced green parts having low solids loading values and did not achieve high fired density. Isopressing the agarose cast parts after drying raised the fired density to greater than 95%, but the parts exhibited catastrophic shorting during electrical testing. Slip casting produced high green density parts, which exhibit high fired density values. The electrical characteristics of slip-cast parts are comparable with dry-pressed powder compacts.
The spontaneously hypertensive rat: insight into the pathogenesis of irritative symptoms in benign prostatic hyperplasia and young anxious males
- William D. Steers, David B. Clemow, Katarina Persson, Todd B. Sherer, Karl-Erik Andersson, Jeremy B. Tuttle
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- Journal:
- Experimental Physiology / Volume 84 / Issue 1 / January 1999
- Published online by Cambridge University Press:
- 03 January 2001, pp. 137-148
- Print publication:
- January 1999
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Recent epidemiological studies have shown that hypertensive men are more likely to undergo surgical intervention for irritative voiding symptoms from BPH than age-matched controls. Indeed, noradrenergic nerves which regulate vascular tone also participate in the functional component of bladder outlet obstruction due to BPH. Newer, less invasive therapies for BPH such as thermal therapy can relieve symptoms yet do not eliminate obstruction based on urodynamic studies. Coincidentally, drugs such as [alpha]-adrenoceptor antagonists, which have been thought to relieve obstruction due to a peripheral effect, can be given intrathecally in animals to relieve urinary frequency due to obstruction. Taken together these observations implicate both peripheral and central sympathetic pathways in the motor control of the urinary bladder especially with disease states.We have used the hypertensive and behaviourally hyperactive spontaneously hypertensive rat (SHR), to investigate the roles sympathetic pathways or micturition. Elevated nerve growth factor (NGF) derived from vascular and bladder smooth muscle cells of the SHR appears to direct morphological, biochemical, and functional changes. The increase in NGF can apparently be explained by stabilization of its mRNA leading to increased synthesis of NGF. Bladders from SHRs develop a profuse noradrenergic hyperinnervation compared with the control WKY strain. Since afferents supplying the SHR bladder are hypertrophied, changes in afferent pathways are also likely.These differences in innervation and NGF in the SHR may explain changes in function. SHRs void 3 times as frequently as their genetic controls. Urinary frequency can be reduced by [alpha]-adrenoceptor antagonists. Cystometrograms performed in SHRs reveal lower bladder capacities and micturition volumes and the presence of unstable contractions compared with the WKY rat. Intrathecal, rather than intra-arterial administration of the [alpha]-adrenoceptor antagonist doxazosin reduces unstable contractions in the SHR. In vitro muscle bath studies have shown enhanced responses of SHR bladder smooth muscle to [alpha]-adrenoceptor agonists.It is likely that upregulation of NGF production causes sensory and possibly noradrenergic pathways to elicit hyperactive voiding. Increase in NGF in the adult bladder due to pathological conditions yields similar, yet distinct, consequences for voiding behaviour and innervation. Likewise, increased NGF in adult bladders following obstruction or inflammation triggers neuronal hypertrophy, enhanced reflex activity and urinary frequency. In contrast to the SHR, hyper-innervation is not observed. Moreover, peripheral or spinal [alpha]-adrenoceptor blockade eliminates urinary frequency following obstruction. These observations support the role for sympathetic pathways in the motor function of the bladder, especially in congenital or adult disease states. A similar process may underlie the neuroplasticity involved in alterations after obstruction or inflammation of the lower urinary tract in humans. The SHR strain raises the possibility that a common genetic defect exists capable of predisposing to both hypertension and overactivity of the urinary bladder. Whether a genetic predisposition to sustained bladder overactivity in response to inflammatory stimuli in obstruction exists in humans is an intriguing prospect.
Comments on the effects of solution precursor characteristics and thermal processing conditions on the crystallization behavior of sol-gel derived lead zirconate titanate thin films
- R. W. Schwartz, J. A. Voigt, B. A. Tuttle, D. A. Payne, T. L. Reichert, R. S. DaSalla
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- Journal:
- Journal of Materials Research / Volume 12 / Issue 2 / February 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 444-456
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- February 1997
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Lead zirconate titanate (PZT 40/60) thin films were fabricated on electroded silicon wafers using chemical solution deposition. Two different chelating agents, acetic acid and acetylacetone, were used in the synthesis of the precursor solutions. The microstructure of the acetylacetone-derived film was characterized by nucleation at the platinum electrode and a columnar growth morphology (˜100−200 nm lateral grain size). In contrast, the acetic acid-derived film was characterized by both columnar grains nucleated at the electrode, and larger (˜1 μm) grains nucleated at the surface of the film. Using Fourier transform infrared (FTIR) diffuse reflectance spectroscopy, we also noted that the pyrolysis behavior of the films was dependent on the chelating agent employed. The acetylacetone-derived films, which displayed only one nucleation event, were also characterized by a higher pyrolysis temperature than the acetic acid-derived films. Previously, microstructural differences of this nature were attributed to variations in “precursor structure.” In this paper, we discuss an alternative mechanism for the observed microstructural variations in films prepared from different solution precursors. In the model proposed, we discuss how changes in film pyrolysis temperature result in a change in film crystallization temperature, and hence, a change in the effective driving force for crystallization. We show how the change in crystallization driving force is expected to impact the thin film microstructure due to the accompanying variations that occur in the barrier heights for interface (lower electrode) and surface nucleation. A standard approach to nucleation in glasses is used as the basis of the proposed model. Finally, we also discuss how the model can be used to understand the observed effects of heating rate and thickness on the microstructure of solution-derived thin films.
Metallization schemes for dielectric thin film capacitors
- H. N. Al-Shareef, D. Dimos, B. A. Tuttle, M. V. Raymond
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- Journal:
- Journal of Materials Research / Volume 12 / Issue 2 / February 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 347-354
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- February 1997
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A detailed analysis of Pt/Ti, Pt/TiO2, and Pt/ZrO2 electrodes was carried out to develop a bottom electrode stack for sol-gel derived thin film capacitors. For the Pt/Ti stack, the choice of layer thickness and deposition temperature is found to affect adhesion to the SiO2/Si substrate as well as the extent of hillock formation and Pt–Ti interaction. By using elevated temperature deposition, Pt films close to 1 μm in thickness can be produced with relatively good adhesion and morphological stability using Ti adhesion layers. In addition, Pt films grown on ZrO2 and TiO2 adhesion layers exhibit little morphological change and no degradation in sheet resistance after annealing at 650 °C. However, neither ZrO2 nor TiO2 are as effective as Ti metal in promoting Pt adhesion. Experiments aimed at establishing a correlation between hillock formation and capacitor yield revealed two important results. First, the behavior of Pt/Ti stacks during annealing in air is markedly different from their behavior during PZT film crystallization. Second, preannealing of the Pt/Ti in air prior to PZT film growth actually improves capacitor yield, even though hillock formation occurs during the preannealing treatment. Implications of these results regarding the role of hillocks in controlling capacitor yield are discussed.
Chemically Prepared Lead Magnesium Niobate Dielectrics
- B. A. Tuttle, J. A. Voigt, D. L. Sipola, W. R. Olson, D. M. Goy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 495 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 185
- Print publication:
- 1997
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A chemical solution powder synthesis technique has been developed that produces fine, uniform powders of lead magnesium niobate (PMN) with 60 to 80 nm crystallite size. The synthesis technique was based on the dissolution of lead acetate and alkoxide precursors in acetic acid followed by precipitation with oxalic acid/propanol solutions. Lead magnesium niobate ceramics fabricated from these chemically derived powders had smaller, more uniform grain size and higher dielectric constants than ceramics fabricated from mixed oxide powders that were processed under similar thermal conditions. Chem-prep PMN dielectrics with peak dielectric constants greater than 22,000 and polarizations in excess of 29 μC/cm2 were obtained for 1100°C firing treatments. Substantial decreases in dielectric constant and polarization were measured for chemically prepared PMN ceramics fired at lower temperatures, consistent with previous work on mixed oxide materials.
Microstructure and 90° domain assemblages of Pb(Zr, Ti)O3//RuO2 capacitors as a function of Zr-to-Ti stoichiometry
- B. A. Tuttle, T. J. Headley, H.N. Al-Shareef, J. A. Voigt, M. Rodriguez, J. Michael, W. L. Warren
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- Journal:
- Journal of Materials Research / Volume 11 / Issue 9 / September 1996
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2309-2317
- Print publication:
- September 1996
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Planar microstructure, 90° domain configurations, and cross-sectional perovskite grain morphology were characterized for a series of Pb(Zr, Ti)O3//RuO2 thin film capacitors. Perovskite grain size increased substantially with increasing Zr concentration of the Pb(Zr, Ti)O3 (PZT) films, being on the order of 0.15 μm for PZT 20/80 films and 2.5 μm for PZT 50/50 films. While PZT 20/80 and PZT 30/70 films were single phase perovskite, the PZT 40/60 and 50/50 films contained a second phase with fluorite structure. The second phase matrix consisted of two nanophases, one having fluorite structure while the other was amorphous. Both the amorphous nanophase and the fluorite nanophase were Pb deficient compared to the perovskite phase. Differences in cross-sectional perovskite grain morphology were substantial for these materials, with the PZT 40/60 film being almost entirely columnar and the PZT 20/80 film exhibiting almost entirely granular morphology. Differences in 90° domain wall density were essentially negligible among the films, suggesting that if 90° domains were responsible for the differences in electrical properties, it is not due to 90° domain population.
Voltage Shifts and Defect-Dipoles in Ferroelectric Capacitors
- W. L. Warren, G. E. Pike, D. Dimos, K. Vanheusden, H.N. Al-Shareef, B. A. Tuttle, R. Ramesh, J. T. Evans, Jr.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 433 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 257
- Print publication:
- 1996
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We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from nearinterfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.
Rf Magnetron Sputter-Deposition of La0.5Sr0.5CoO3//Pt Composite Electrodes for Pb(Zr, Ti)O3 Thin Film Capacitors
- M. V. Raymond, H. N. Al-Shareef, B. A. Tuttle, D. DiMos, J. T. Evans
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- Journal:
- MRS Online Proceedings Library Archive / Volume 433 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 145
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- 1996
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La0.5Sr0.5CoO3 (LSCO) thin films have been deposited using RF magnetron sputterdeposition for use as an electrode material for Pb(Zr, Ti)O3 (PZT) thin film capacitors. The effect of the O2:Ar sputter gas ratio during deposition, on the LSCO film properties was investigated. It was found that the resistivity of the LSCO films deposited at ambient temperature decreases as the O2:Ar ratio was increased for both the as-deposited and annealed films. In addition, it was found that thin overlayers of LSCO tend to stabilize the underlying Pt//Ti electrode structure during subsequent thermal processing. The LSCO//Pt//Ti composite electrode stack has a low resistivity and provides excellent fatigue performance for PZT capacitors. Furthermore, the LSCO//Pt//Ti electrode sheet resistance does not degrade with annealing temperature and the electrode does not display hillock formation. Possible mechanisms for the stabilization of the Pt//Ti electrode with LSCO overlayers will be discussed.
Effects of the Concentration of Ga on Junction Formation in Thin-film ZnO/CdS/CuInXGal-XSe2 /Mo Photovoltaic Devices
- R. J. Matson, M. A. Contreras, J. R. Tuttle, A. B. Swartzlander, P. A. Parilla, R. Noufi
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- Journal:
- MRS Online Proceedings Library Archive / Volume 426 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 183
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- 1996
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Charge-collection microscopy (CCM)—commonly known as electron-beam-induced current [EBIC] microscopy—in a scanning electron microscope (SEM) was used to obtain charge-collection efficiency profiles of cleaved thin-film ZnO/CdS/CuInXGal-XSe2/Mo photovoltaic devices on glass substrates, with x varied between 0 and 100%. We observed considerable variation in the EBIC peak position, the uniformity (between and within devices), and overall charge-collection profile of the junction as a function of Ga concentration. Whereas using only CuInSe2 (CIS) absorber material results in a rather wide and buried junction in the CIS, the systematic addition of Ga to the p-CuInSe2 matrix affects the conductivity type of the material, thereby creating an increasingly abrupt, uniform, and shallow junction near the heteroface. Although the substitution of Ga for In improves overall device performance up to ∼ X=25% and the Voc continues to improve, the Jsc, FF, and device efficiency degrade with additional Ga.
Neutron Diffraction Studies on Recrystallization of Solution Derived Lead Zirconate Titanates
- B. Morosin, A. C. Lawson, G.H. Kwei, J. A. Voigt, B. A. Tuttle
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- Journal:
- MRS Online Proceedings Library Archive / Volume 376 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 609
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- 1994
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We performed neutron powder diffraction on solution-derived lead zirconate titanates (PZT). Three compositions, PZT 45/55, PZT 20/80 and PbTiO3, were investigated. The materials were annealed so that the perovskite phase had just begun to grow from the precursor phase. In our materials this precursor phase is the pyrochlore rather than fluorite phase. The results show that in the pyrochlore phase, the (Ti,Zr) and the Pb are ordered in their crystallographic sites while the O are essentially disordered in both of the two usual pyrochlore anion sites.
Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials
- A. Krishnan, D.J. Keeble, R. Ramesh, W.L. Warren, B.A. Tuttle, R.L. Pfeffer, B. Nielsen, K.G. Lynn
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- Journal:
- MRS Online Proceedings Library Archive / Volume 361 / 1994
- Published online by Cambridge University Press:
- 15 February 2011, 129
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- 1994
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Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.
Microstructural Evolution of Pb(Zr,Ti)O3 Ceramics Using Electron Paramagnetic Resonance
- W. L. Warren, B. A. Tuttle, R. W. Schwartz, W. F. Hammetter, D. C. Goodnow, J. T. Evans, Jr., J. A. Bullington
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- Journal:
- MRS Online Proceedings Library Archive / Volume 310 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 3
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- 1993
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Using electron paramagnetic resonance (EPR) we have followed the microstructural evolution with temperature of lead zirconate titanate (PZT) ceramics from the amorphous to the perovskite phase. A number of paramagnetic point defects were identified (Carbon, Pb+3, and Ti+3) while traversing the evolution of these ceramics during various heat treatments both before and after optical illumination. Perhaps the most important finding is that the Pb+3 and Ti+3 centers can only be optically created in the perovskite materials, thereby, showing that they are not associated with the amorphous or the pyrochlore phases. It is also found that EPR signals attributed to carbon radicals are present in fairly high concentrations (4 × 1017/cm3) if the solution chemistry derived PZT materials are annealed in an oxygen deficient ambient (0.1% O2) at 650°C.
Charge Trapping Centers in Ferroelectric Ceramics
- C. H. Seager, W. L. Warren, B. A. Tuttle, R. D. Nasby, D. Dimos
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- Journal:
- MRS Online Proceedings Library Archive / Volume 284 / 1992
- Published online by Cambridge University Press:
- 22 February 2011, 493
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- 1992
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Electron paramagnetic resonance (EPR), photo-thermal deflection spectroscopy (PDS), and electrical measurements have been used to characterize as-received and UV-lluminated lead lanthanum zirconate titanate (PLZT) and PZT ceramics. Following optical illumination we observe the activation of positively charged Pb+3 and negatively charged Ti+3 ions, as well as an increased broad absorption peak around 2.6 eV. The spatial distribution of the induced absorption correlates well with the location of the absorbed UV, suggesting that photo-produced carrier pairs are trapped at Ti+4 and Pb+2 producing the observed paramagnetism. The Ti+3 EPR spectra were successfully fit using the crystal field parameters derived from the PDS spectra. Preliminary results suggest that these charged paramagnetic ions can influence the electrical properties of PZT thin films. We investigated the effects of UV light and dc bias sequences by polarization-electric field (PE) measurements and find that the coercive fields are dependent on the sign of the applied bias during UV exposure. It is reasonable to expect that Pb+3 and/or Ti+3 ions act as the charge trapping sites which cause the threshold voltage shifts in the PE loop.
Chemical preparation and properties of high-field zinc oxide varistors
- R. G. Dosch, B. A. Tuttle, R. A. Brooks
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- Journal:
- Journal of Materials Research / Volume 1 / Issue 1 / February 1986
- Published online by Cambridge University Press:
- 03 March 2011, pp. 90-99
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- February 1986
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Chemical preparation methods were developed for high-field ZnO varistors which used precipitation techniques to prepare precursor powders. Varistors were made by sintering uniaxially pressed pellets in the range of 675°–740 °C in air. Properties of these varistors included electric fields (E) in the 10–100 kV/cm range at current densities (J) of 5 A/cm2, nonlinearity coefficients (α) greater than 30 for 2.5≤J≤5.O A/cm2, and densities in the range of 65%-99% of theoretical depending both on sintering temperature and composition.